| PART |
Description |
Maker |
| K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
http://
|
| K8D6316UTM-PC07 K8D638UTM-PC07 K8D6X16UTM06 K8D6X1 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
| MB84VD23381HJ-70PBS MB84VD23381HJ MB84VD23381HJ-70 |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc.
SPANSION LLC
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY SPECIALTY MEMORY CIRCUIT, PBGA66
|
Macronix International Co., Ltd.
|
